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Nonlithographic patterning and metal-assisted chemical etching for manufacturing of tunable light-emitting silicon nanowire arrays

机译:用于制造可调发光硅纳米线阵列的非光刻图案化和金属辅助化学蚀刻

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摘要

Semiconductor nanowires have potential applications in photovoltaics, batteries, and thermoelectrics. We report a top-down fabrication method that involves the combination of superionic-solid-state-stamping (S4) patterning with metal-assisted-chemical-etching (MacEtch), to produce silicon nanowire arrays with defined geometry and optical properties in a manufacturable fashion. Strong light emission in the entire visible and near infrared wavelength range at room temperature, tunable by etching condition, attributed to surface features, and enhanced by silver surface plasmon, is demonstrated.
机译:半导体纳米线在光伏,电池和热电领域具有潜在的应用。我们报告了一种自上而下的制造方法,该方法涉及将超离子固态冲压(S4)图案与金属辅助化学蚀刻(MacEtch)结合使用,以制造出可定义的几何形状和光学特性的硅纳米线阵列时尚。证实了在室温下在整个可见光和近红外波长范围内的强光发射,该光发射可通过蚀刻条件进行调节,这归因于表面特征,并通过银表面等离子体激元增强了。

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