Low voltage nanoelectromechanical switches based on silicon carbide nanowires

摘要

We report experimental demonstrations of electrostatically actuated, contact-mode nanoelectromechanical switches based on very thin silicon carbide (SiC) nanowires (NWs). These NWs are lithographically patterned from a 50 nm thick SiC layer heteroepitaxially grown on single-crystal silicon (Si). Several generic designs of in-plane electrostatic SiC NW switches have been realized, with NW widths as small as ～20 nm and lateral switching gaps as narrow as ～10 nm. Very low switch-on voltages are obtained, from a few volts down to ～1 V level. Two-terminal, contact-mode hot switching with high on/off ratios (>10~2 or 10~3) has been demonstrated repeatedly for many devices. We find enhanced switching performance in bare SiC NWs, with lifetimes exceeding those based on metallized SiC NWs.