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Probing Local Strain at MX_2?Metal Boundaries with Surface Plasmon-Enhanced Raman Scattering

机译:用表面等离激元增强拉曼散射探测MX_2?金属边界处的局部应变

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Interactions between metal and atomically thin two-dimensional (2D) materials can exhibit interesting physical behaviors that are of both fundamental interests and technological importance. In addition to forming a metal?semiconductor Schottky junction that is critical for electrical transport, metal deposited on 2D layered materials can also generate a local mechanical strain. We investigate the local strain at the boundaries between metal (Ag, Au) nanoparticles and MX_2 (M = Mo, W; X = S) layers by exploiting the strong local field enhancement at the boundary in surface plasmonenhanced Raman scattering (SERS). We show that the local mechanical strain splits both the in-plane vibration mode E_(2g)~1 and the out-of-plane vibration mode A_(1g) in monolayer MoS_2, and activates the in-plane mode E_(1g) that is normally forbidden in backscattering Raman process. In comparison, the effects of mechanical strain in thicker MoS_2 layers are significantly weaker. We also observe that photoluminescence from the indirect bandgap transition (when the number of layers is ≥2) is quenched with the metal deposition, while a softened and broadened shoulder peak emerges close to the original direct-bandgap transition because of the mechanical strain. The strain at metal?MX_2 boundaries, which locally modifies the electronic and phonon structures of MX_2, can have important effects on electrical transport through the metal?MX_2 contact.
机译:金属与原子薄的二维(2D)材料之间的相互作用可以表现出有趣的物理行为,这些行为既具有基本意义,又具有技术重要性。除了形成对电传输至关重要的金属半导体肖特基结以外,沉积在2D层状材料上的金属还可以产生局部机械应变。我们通过利用表面等离子体增强拉曼散射(SERS)边界处的强局部场增强来研究金属(Ag,Au)纳米颗粒与MX_2(M = Mo,W; X = S)层之间的边界处的局部应变。我们表明,局部机械应变在单层MoS_2中分裂了平面内振动模式E_(2g)〜1和平面外振动模式A_(1g),并激活了平面内振动模式E_(1g)通常在反向散射拉曼过程中是禁止的。相比之下,在较厚的MoS_2层中机械应变的影响要弱得多。我们还观察到,间接带隙跃迁(当层数≥2时)的光致发光通过金属沉积而被淬灭,而由于机械应变,软化且变宽的肩峰出现在原始的直接带隙跃迁附近。金属MX_2边界处的应变会局部改变MX_2的电子和声子结构,这可能会对通过金属MX_2触点的电传输产生重要影响。

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