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Mechanical properties of Si nanowires as revealed by in situ transmission electron microscopy and molecular dynamics simulations

机译:原位透射电子显微镜和分子动力学模拟显示的硅纳米线的机械性能

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摘要

Deformation and fracture mechanisms of ultrathin Si nanowires (NWs), with diameters of down to ~9 nm, under uniaxial tension and bending were investigated by using in situ transmission electron microscopy and molecular dynamics simulations. It was revealed that the mechanical behavior of Si NWs had been closely related to the wire diameter, loading conditions, and stress states. Under tension, Si NWs deformed elastically until abrupt brittle fracture. The tensile strength showed a clear size dependence, and the greatest strength was up to 11.3 GPa. In contrast, under bending, the Si NWs demonstrated considerable plasticity. Under a bending strain of <14%, they could repeatedly be bent without cracking along with a crystalline-to-amorphous phase transition. Under a larger strain of >20%, the cracks nucleated on the tensed side and propagated from the wire surface, whereas on the compressed side a plastic deformation took place because of dislocation activities and an amorphous transition.
机译:通过原位透射电子显微镜和分子动力学模拟研究了直径小于〜9nm的超薄硅纳米线在单轴拉伸和弯曲下的变形和断裂机理。结果表明,硅纳米线的力学行为与线径,负载条件和应力状态密切相关。在拉力作用下,硅纳米线弹性变形,直到突然脆性断裂。拉伸强度显示出明显的尺寸依赖性,最大强度高达11.3 GPa。相反,Si NW在弯曲下表现出可观的可塑性。在小于14%的弯曲应变下,它们可以反复弯曲而不会破裂,并且会发生结晶至非晶相变。在大于20%的较大应变下,裂纹在张紧侧成核并从金属丝表面扩展,而在压缩侧由于位错活动和无定形过渡而发生塑性变形。

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