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General method of synthesis ultrathin ternary metal chalcogenide nanowires for potential thermoelectric applications

机译:潜在热电应用合成超细三元金属硫族化物纳米线的一般方法

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In this work we demonstrate a solution-based approach to the synthesis of ternary metal chalcogenide nanowires (NWs) with high thermoelectric figure of merit (ZT) and power factors. Utilizing templates of Te1-xSex alloys to balance the chemical reactivity between Te and Se atoms, we have been able to add a number of different metal species while maintaining a single-phase ternary metal chalcogenide NW with small diameter (<20 nm) and well defined crystal structure. This method opens the door for scalable synthesis ultrathin and composition tunable selenium doped ternary chalcogenide NWs. Moreover, spark plasma sintered NW-based bulk material exhibits ZT value as high as 0.75 which excessed previously nanocrystal and nanoplatelet based one. Examining the temperature dependent behavior of conductivity and Seebeck coefficient, we suggest the charge transfer mechanisms within the system are dominated by the energy barrier between NW-NW nano junctions.
机译:在这项工作中,我们展示了一种基于解决方案的方法来合成具有高热电性能因数(ZT)和功率因数的三元金属硫族化物纳米线(NW)。利用Te1-xSex合金的模板来平衡Te和Se原子之间的化学反应性,我们能够添加许多不同的金属物种,同时保持小直径(<20 nm)且直径较小的单相三元硫属元素化物NW确定的晶体结构。该方法为可扩展的合成超薄和组成可调的硒掺杂三族硫族化物NW打开了大门。此外,火花等离子体烧结的基于NW的块状材料表现出高达0.75的ZT值,其超过了先前基于纳米晶体和纳米片的一种。检查电导率和塞贝克系数的温度依赖性行为,我们建议系统内的电荷转移机制受NW-NW纳米结之间的能垒支配。

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