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首页> 外文期刊>Measurement Science & Technology >Investigation of the peak power enhancement available from a surface emitting GaAlAs near-infrared light emitting diode by cooling and pulsing
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Investigation of the peak power enhancement available from a surface emitting GaAlAs near-infrared light emitting diode by cooling and pulsing

机译:通过冷却和脉冲研究表面发射GaAlAs近红外发光二极管可提供的峰值功率增强

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Light emitting diode (LED) light sources are required for many illumination and optical sensing applications, due to their compact dimensions, low cost and low power consumption. The optimization of optical power output in a specific wavelength band is often of critical importance. We are interested in using LEDs for optical sensing systems, particularly for gas sensing. We have conducted a very comprehensive engineering study to show that, by packaging a commercial surface emitting LED in a cooled heat-sunk package and optimizing the drive current for this lower temperature, the power from the LED may be substantially improved, particularly when pulsed at low duty cycle. We have found that, even with moderate cooling using a Peltier heat pump, the intensity in our required spectral band was improved by a factor of 5 compared to that attainable under normal drive conditions. We have also verified that almost all spectral changes in the LED were due to temperature changes in the emitting chip, rather than from other effects related to injection current, such as internal optical gain.
机译:由于其紧凑的尺寸,低成本和低功耗,许多照明和光学传感应用都需要发光二极管(LED)光源。在特定波长带中优化光功率输出通常至关重要。我们有兴趣将LED用于光学传感系统,尤其是用于气体传感。我们进行了非常全面的工程研究,结果表明,通过将商用表面发光LED封装在冷却的散热器中并针对较低的温度优化驱动电流,可以显着提高LED的功率,特别是在以低占空比。我们发现,即使使用珀尔帖热泵进行适度的冷却,与正常驱动条件下相比,我们所需光谱带中的强度也提高了5倍。我们还验证了LED中几乎所有的光谱变化都是由于发光芯片中的温度变化引起的,而不是由于与注入电流相关的其他影响(例如内部光学增益)引起的。

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