Fast in-line surface topography metrology enabling stress calculation for solar cell manufacturing for throughput in excess of 2000 wafers per hour

摘要

We present a novel structured pattern projection tool for stress, and topography measurement of solar cells. The presented tool has expanded ( two standard deviations) accuracy and repeatability of 0.5 mm, exceeding current industry requirements (+/- 0.05 mm one standard deviation). Measurements on the R&D system indicate that this technology is capable of performing measurements with a throughput exceeding 2000 wafers per hour.