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Importance of inclusion of the effect of s electrons into bond-order potentials for transition bcc metals with d-band mediated bonding

机译:在d波段介导的键合过渡bcc金属中,将s电子效应纳入键序势的重要性

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In bond-order potentials (BOPs) for transition metals only the bonding mediated by the d electrons is included explicitly and the covalent part of the cohesive energy is evaluated using Slater-Koster dd bond integrals. However, the effect of s electrons with orbitals centered on atoms neighboring the corresponding dd bond is not necessarily negligible. As shown in Nguyen-Manh et al (2000 Phys. Rev. Lett. 85 4136) this can be taken into account via screening of the dd bond integrals. In a recent paper (Lin et al 2014 Model. Simul. Mater. Sci. Eng. 22 034002) the dd bond integrals were determined using a projection scheme utilizing atomic orbitals that give the best representation of the electronic wave functions in the calculations based on the density functional theory (DFT) (Madsen et al 2011 Phys. Rev. B 83 4119) and it was inferred that in this case the effect of s electrons was already included. In this paper we analyze this hypothesis by comparing studies employing BOPs with both unscreened and screened dd bond integrals. In all cases results are compared with calculations based on DFT and/or experiments. Studies of structures alternate to the bcc lattice, transformation paths that connect the bcc structure with fcc, simple cubic (sc), body centered tetragonal (bct) and hcp structures via continuously distorted configurations and calculations of.-surfaces were all found to be insensitive to the screening of bond integrals. On the other hand, when the bond integrals are screened, formation energies of vacancies are improved and calculated phonon dispersion spectra reproduce the experimentally observed ones much better. Most importantly, dislocation core structure and dislocation glide are significantly different without and with screening of dd bond integrals. The latter lead to a much better agreement with available experiments. These findings suggest that the effect of s electrons on dd bonds, emulated by the screening of corresponding bond integrals, is the least significant when the lattice is distorted away from the ideal bcc structure homogeneously even if such distortion is large. On the other hand, when the distortion is local and inhomogeneous the impact of screening of the dd bond integrals is significant. In the studies presented in this paper such local inhomogeneities occur when phonons propagate through the lattice, at point defects and in the cores of dislocations.
机译:在过渡金属的键序电位(BOP)中,仅明确包含d电子介导的键,并且使用Slater-Koster dd键积分来评估内聚能的共价部分。但是,s电子的轨道集中在与相应dd键相邻的原子上的作用不一定是可以忽略的。如Nguyen-Manh等人(2000 Phys。Rev. Lett。85 4136)所示,可以通过筛选dd键积分来考虑这一点。在最近的一篇论文中(Lin等人,2014年,Model。Simul。Mater。Sci。Eng。22 034002),dd键积分是使用一种利用原子轨道的投影方案确定的,该方案在计算基于密度泛函理论(DFT)(Madsen et al 2011 Phys。Rev. B 83 4119),据推测,在这种情况下,已经包括了s电子的作用。在本文中,我们通过比较采用BOP与未筛选和已筛选dd键积分的研究来分析该假设。在所有情况下,将结果与基于DFT和/或实验的计算结果进行比较。研究发现,结构不断变化的bcc晶格,通过连续扭曲的构型将bcc结构与fcc,简单立方(sc),体心四边形(bct)和hcp结构相连接的转换路径和表面计算均不敏感。对键积分的筛选。另一方面,当筛选键积分时,可以提高空位的形成能,并且计算出的声子色散谱可以更好地再现实验观察到的声子色散谱。最重要的是,在没有筛查dd键积分的情况下,位错核心结构和位错滑动明显不同。后者导致与可用实验的更好的一致性。这些发现表明,当晶格均匀地偏离理想的bcc结构时,即使这种畸变很大,通过筛选相应的键积分模拟出的s电子对dd键的影响最小。另一方面,当变形是局部且不均匀时,dd键积分筛选的影响非常明显。在本文提出的研究中,当声子在晶格中,点缺陷处和位错核心处传播时,会发生局部不均匀性。

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