Negative differential resistance induced by SiNx co-dopant in armchair graphene nanoribbon

摘要

By adopting density functional theory in combination with nonequilibrium Green's functions, we investigated the electronic structure and transport properties of siliconitrogen (Si/N) co-doping armchair graphene nanoribbons (AGNRs) with SiNx co-dopant incorporated in neighboring carbon atoms. The results demonstrate that the electronic structure can be modulated by introducing SiNx co-dopants in AGNRs. The striking negative differential resistance behaviors in the range of low bias can be observed in Si/N co-doped AGNR devices. These remarkable properties suggest the potential application of Si/N co-doping AGNRs in molectronics.