首页> 外文期刊>Modern Physics Letters, B. Condensed Matter Physics, Statistical Physics, Applied Physics >Boron/Phosphorus co-doping in zigzag single-walled carbon nanotubes: A first-principles study
【24h】

Boron/Phosphorus co-doping in zigzag single-walled carbon nanotubes: A first-principles study

机译:曲折单壁碳纳米管中的硼/磷共掺杂:第一性原理研究

获取原文
获取原文并翻译 | 示例
           

摘要

By using the first-principles methods based on density function theory (DFT), the effects of boron(B)/phosphorus(P) pair co-doping on the electrical properties of zigzag single-walled carbon nanotubes (SWNTs) have been investigated. We calculated the formation energies and band structures of (6, 0) metallic and (8, 0) semiconducting SWNTs with different B/P co-doping sites and concentrations. The obtained formation energies suggest that the B/P co-doping configurations are energetically stable structures and the B and P tend to form a B-P bond. It shows that an energy gap is opened by B/P co-doping in (6, 0) metallic SWNTs and the metallic carbon nanotubes are converted into semiconductors. For the (8, 0) semiconducting SWNTs, B/P co-doping influences the band structure, but it does not change the attributes essentially and the SWNTs are still semiconducting. It was also found that the band structures depend on the doping concentration as well as the doping site of B/P pair.
机译:通过使用基于密度泛函理论(DFT)的第一性原理方法,研究了硼(B)/磷(P)对共掺杂对之字形单壁碳纳米管(SWNT)的电学性能的影响。我们计算了具有不同B / P共掺杂位点和浓度的(6,0)金属和(8,0)半导体单壁碳纳米管的形成能和能带结构。所获得的形成能表明,B / P共掺杂构型是能量稳定的结构,并且B和P倾向于形成B-P键。它表明,通过在(6,0)金属SWNT中进行B / P共掺杂而打开了能隙,并且金属碳纳米管被转化为半导体。对于(8,0)半导体单壁碳纳米管,B / P共掺杂会影响能带结构,但本质上不会改变属性,并且单壁碳纳米管仍是半导体。还发现带结构取决于掺杂浓度以及B / P对的掺杂位点。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号