Growth and characterization of GaAs by metalorganic chemical vapor deposition using triethylgallium and solid arsenic

摘要

GaAs-low compensated layers were grown by using an atmospheric MOCVD system. Solid arsenic and triethylgallium (TEG) were used as precursors. The layers exhibit an electron mobility greater than 30,000 cm(2)/V-sec at 77K for best growing conditions. This is the highest. value reported until now for MOCVD GaAs grown by using non-arsine based alternative arsenic sources. The resulting layers were n-type with a minimum electron concentration Of 10(15) cm(-3). The DLTS studies shown the EL2 electron level as die dominant trap with a concentration of 10(13) cm(-3). [References: 6]