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首页> 外文期刊>Modern Physics Letters, B. Condensed Matter Physics, Statistical Physics, Applied Physics >Thermoelectric properties of In-filled and Te-doped CoSb3 prepared by high-pressure and high-temperature
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Thermoelectric properties of In-filled and Te-doped CoSb3 prepared by high-pressure and high-temperature

机译:高压高温制备的In填充Te掺杂CoSb3的热电性能

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摘要

A novel chemical alloying method of high-pressure and high-temperature (HPHT) has been used for the synthesis of bulk-skutterudite In0.5Co4Sb11.5Te0.5. Through HPHT method, the synthesis time has been shortened from a few days to 30 min. The samples of In0.5Co4Sb11.5Te0.5 skutterudites were synthesized at 1.8-3.3 GPa. We have studied the phase, the microstructure, and the temperature-dependent thermoelectric properties. The Seebeck coefficient, electrical conductivity and thermal conductivity were measured in the temperature range of 295-673 K. As we expected, the thermal conductivity of sample In0.5Co4Sb11.5Te0.5 decreased with the increase of the synthetic pressure. A maximal ZT of 0.64 was achieved for the In0.5Co4Sb11.5Te0.5 synthesized at 1.8 GPa at 673 K. These results revealed that HPHT method may be helpful for optimizing electrical conductivity and thermal conductivity in a comparatively independent way.
机译:一种新颖的高压高温化学合金化方法(HPHT)已用于合成方钴矿In0.5Co4Sb11.5Te0.5。通过HPHT方法,合成时间从几天缩短到30分钟。 In0.5Co4Sb11.5Te0.5方钴矿样品的合成温度为1.8-3.3 GPa。我们研究了相,微观结构和与温度有关的热电性质。在295-673 K的温度范围内测量了塞贝克系数,电导率和热导率。正如我们所预期的,样品In0.5Co4Sb11.5Te0.5的热导率随着合成压力的增加而降低。在673 K下以1.8 GPa合成的In0.5Co4Sb11.5Te0.5的最大ZT为0.64。这些结果表明,HPHT方法可能以相对独立的方式有助于优化电导率和导热率。

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