首页> 外国专利> Sn-FILLED AND Te-DOPED SKUTTERUDITE THERMOELECTRIC MATERIAL AND METHOD FOR MANUFACTURING THE SAME

Sn-FILLED AND Te-DOPED SKUTTERUDITE THERMOELECTRIC MATERIAL AND METHOD FOR MANUFACTURING THE SAME

机译:填充锡和掺钛的方钴矿热电材料及其制造方法

摘要

A Sn-filled and Te-doped skutterudite thermoelectric material and method for manufacturing the same is provided to increase thermal conductivity by optimizing the concentration of a carrier. An Sn-filled and Te-doped skutterudite thermoelectric material is comprised of the steps: inserting cobalt, antimony, indium, and tellurium into the quartz tube; heating and melting the inserted material with high frequency induction power; rapidly freezing in the water in order to prevent formation of the second phase after melting; perform vacuum heating treatment to fill indium into the aperture and activate Te.
机译:提供了一种Sn填充和Te掺杂的方钴矿热电材料及其制造方法,以通过优化载体的浓度来增加热导率。填充锡和掺Te的方钴矿热电材料包括以下步骤:将钴,锑,铟和碲插入石英管中;将钴,锑,铟和碲插入石英管中。用高频感应功率加热和熔化插入的材料;在水中迅速冻结,以防止融化后形成第二相;进行真空加热处理,将铟填充到孔中并激活Te。

著录项

  • 公开/公告号KR100910158B1

    专利类型

  • 公开/公告日2009-07-30

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20070091779

  • 发明设计人 어순철;김일호;

    申请日2007-09-10

  • 分类号H01L35/14;

  • 国家 KR

  • 入库时间 2022-08-21 19:11:47

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