PHASE TRANSITION PROPERTIES OF FERROELECTRIC THIN FILM WITH ONE DISTINCT INSERTING-LAYER

摘要

The mean-field expressions derived from the transverse Ising model are used to investigate the second-order ferroelectric phase transition. With this theory, the properties of ferroelectric thin films formed by inserting a monolayer of material B into material A in the middle was studied. Firstly, a recursive equation for the phase transition properties of the ferroelectric thin film with one distinct inserting-layer in the middle was obtained. Next, the effect of the exchange interaction and transverse field parameters of materials A and B on the phase diagrams was investigated. The results show that with the modi. cation of the parameter values of the inserting-layer B, the properties of the phase transition, the crossover value of the transverse field, the polarizations of different layers, and the critical temperature, change sensitively.