THIRD-HARMONIC GENERATION OF WURTZITE GaN-BASED COUPLING QUANTUM WELLS WITH STRONG BUILT-IN ELECTRIC FIELDS

摘要

Based on the density matrix approach and iterative treatment, the third-harmonic generation (THG) susceptibility of a wurtzite nitride coupling quantum well (CQW) with strong built-in electric fields have been theoretically investigated. The band non-parabolicity effect of nitride heterostructures has been taken into account. A typical wurtzite AlGaN/GaN CQW are chosen to perform numerical calculations. The result shows that, the THG coefficients sensitively depend on the structural parameters of the CQW system. Moreover, a strong THG process can be realized in the nitride CQW by choosing a group of appropriate structural parameters and doped fraction.