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Nanoprofiles evaluation of ZnO thin films by an evanescent light method

机译:e逝光法评估ZnO薄膜的纳米性能

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摘要

The extraction efficiency of evanescent light from ZnO nanolayers and their thickness profiles in the range of (1-105) nm was evaluated by a new microscopy technique, differential evanescent light intensity imaging method. It is based on capturing the evanescent light scattered by the layer of the material deposited on glass substrates. The analyzed ZnO films were obtained by pulsed laser deposition at 27°C and 100°C, using a nanosecond UV laser source. Microsc. Res. Tech., 76:992-996, 2013.
机译:ZnO纳米层的differential逝光的提取效率及其厚度分布在(1-105)nm范围内,通过一种新的显微镜技术,即差示e逝光强度成像方法进行了评估。它基于捕获由沉积在玻璃基板上的材料层散射的scattered逝光。使用纳秒级的紫外线激光源,通过在27°C和100°C下的脉冲激光沉积获得分析后的ZnO膜。 Microsc。 Res。 Tech。,76:992-996,2013。

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