DESIGN TRADEOFF FOR SiGe 0.35-μm BiCMOS LOW-POWER AND HIGH FIGURE-OF-MERIT LNA

摘要

A 5.4-mW ultra-low dc power low-noise amplifier (LNA) at 5.5 GHz, based on 0.35-μm BiCMOS technology, is presented. The trade-off between the NF and linearity for LNA circuit design has been investigated. Furthermore, the use of the HBT-cascade-MOS methodology simultaneously satisfies the trade-off between the noise figure (NF) and linearity of the LNA. This amplifier achieves a gain/NF × P{sub}(DC) ratio figure of merit of 0.774 (1/mW), which is the best reported at the 5-6-GHz band, and is suitable for wireless LAN applications.