ULTRAWIDEBAND NOTCH-BAND POWER DIVIDER WITH BANDPASS RESPONSE USING DEFECT MICROSTRIP STRUCTURE

摘要

A novel ultrawideband (UWB) notch-band power divider with bandpass response has been presented. The short-circuited coupled lines and open/short-circuited slotline are introduced to construct this power divider. A resistor, R, is located across the slotline to improve the isolation between the output ports. The defected microstrip structure has been embedded to the UWB power divider and the notch band within the UWB passband is implemented. The central frequency and bandwidth of the notch band can be controlled by tuning the structural parameters. The presented power divider has been developed and measured. The measured notch band is located at 5.9 GHz with an attenuation of around 22 dB. The measured results show reasonable agreement with the predicted ones.