A NEW PHENOMENON IN GAAS PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES TRIGGERED BY LASER DIODE

摘要

A new phenomenon in GaAs photoconductive semiconductor switches triggered by laser diodes is reported. It occurs when the switch is biased under the threshold and triggered by serial laser pulses. This phenomenon reflects the carrier accumulation effect when the switch operates at the nonlinear mode. The effects of bias voltage and optical pulse energy on the carrier accumulation are investigated. The results indicate that number of carrier can be controlled by adjusting bias voltage and optical pulse energy.