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首页> 外文期刊>IEEE Electron Device Letters >Comparison on the Synchronization of Two Parallel GaAs Photoconductive Semiconductor Switches Excited by Laser Diodes
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Comparison on the Synchronization of Two Parallel GaAs Photoconductive Semiconductor Switches Excited by Laser Diodes

机译:激光二极管激发的两个并联GaAs光电导半导体开关的同步比较

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摘要

In this letter, the synchronization of GaAs photoconductive semiconductor switches in two electrically driven configurations for laser diodes excitation is investigated. Comparisons on the synchronization are carried out by varying the bias electric field and optical excitation energy. The optimum synchronization of 296 ps is achieved at 1.2 kV with optical excitation energy of . The results demonstrate the relationship between the synchronization and transient carriers’ population ratio among the intervalley.
机译:在这封信中,研究了两种电驱动配置下的GaAs光电导半导体开关对激光二极管激发的同步。通过改变偏置电场和光激发能来进行同步比较。在1.2 kV的光激发能量为1.25 kV时,达到了296 ps的最佳同步。结果证明了区间载波之间的同步与瞬态载波的人口比率之间的关系。

著录项

  • 来源
    《IEEE Electron Device Letters》 |2017年第9期|1274-1277|共4页
  • 作者单位

    Research Center for Ultrafast Photoelectric Technology, Xi’an University of Technology, Xi’an, China;

    Research Center for Ultrafast Photoelectric Technology, Xi’an University of Technology, Xi’an, China;

    Research Center for Ultrafast Photoelectric Technology, Xi’an University of Technology, Xi’an, China;

    Research Center for Ultrafast Photoelectric Technology, Xi’an University of Technology, Xi’an, China;

    Research Center for Ultrafast Photoelectric Technology, Xi’an University of Technology, Xi’an, China;

    Research Center for Ultrafast Photoelectric Technology, Xi’an University of Technology, Xi’an, China;

    Research Center for Ultrafast Photoelectric Technology, Xi’an University of Technology, Xi’an, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Synchronization; Gallium arsenide; Optical switches; Optical pulses; Optical fibers; Electric fields;

    机译:同步;砷化镓;光开关;光脉冲;光纤;电场;

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