Ka-BAND 0.18 μm CMOS LOW NOISE AMPLIFIER WITH 5.2 dB NOISE FIGURE

摘要

A Ka-band low noise amplifier (LNA) using three cascaded stages was designed and implemented in a standard 0.18 μm CMOS technology. The fabricated Ka-band LNA achieves power gain (S21) above 12 dB from 30 to 32 GHz and a minimal noise figure of 5.2 dB at 31.5 GHz. The three cascaded stages LNA consume 15.58 mA from 1 V power supply. Compared with the recent published literatures, this LNA operates at the highest frequency ever reported by standard bulk 0.18 μm CMOS process.