A NEW DIFFERENTIAL STACKED SPIRAL INDUCTOR WITH IMPROVED SELF-RESONANCE FREQUENCY

摘要

A new silicon-based differential stacked spiral inductor (DSSI) was implemented using a standard 0.18μm complimentary metal-oxide semiconductor technology. Based on the measured two-port S-parameter using a standard de-embedding procedure, the self-resonance frequency, f_(sr) and quality factor, Q, of the new DSSI were compared with a conventional DSSI. The f_(sr) of the new DSSI was nearly twice as high as that of the conventional DSSI, and the Q value of the new DSSI was also enhanced.