CMOS symmetric trace differential stacked spiral inductor

摘要

A miniature silicon-based symmetric trace differential stacked spiral inductor (SDSSI) has been implemented using standard 0.18 ;C;m CMOS technology. Based on the measured two-port S-parameter using a standard de-embedding procedure, the self-resonance frequency (fsr) and quality factor (Q) of the SDSSI were compared to a conventional differential stacked spiral inductor (DSSI). The fsr of the SDSSI was nearly 2.5 times higher than that of the DSSI, and the Q value of the SDSSI was also enhanced.