首页> 外文期刊>Microwave and optical technology letters >K-BAND, LOW-POWER CMOS INJECTION-LOCKED DIVIDE-BY-THREE CIRCUIT USING SHUNT-PEAKING AND CURRENT-BLEEDING TECHNIQUES
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K-BAND, LOW-POWER CMOS INJECTION-LOCKED DIVIDE-BY-THREE CIRCUIT USING SHUNT-PEAKING AND CURRENT-BLEEDING TECHNIQUES

机译:K形,低功耗CMOS注入锁定,分流和电流泄放技术将电路划分为三路

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摘要

A CMOS divide-by-three injection-locked frequency divider having a wide input locking range of 23-27 GHz is proposed. The wide locking range is achieved by combining the shunt-peaking and current-bleeding techniques. The proposed circuit is fabricated using a 0.18μm RF CMOS process, and the measured operation range (i.e., total locking range) is 4.32 GHz (from 23.17 to 27.49 GHz) for an input injection power of +4 dBm. The power consumption is 4.28 mW at a supply voltage of 1.2 V. The second- and third-order harmonic suppressions are 38.05 and 37.89 dBc, respectively, for a divided output frequency of 8.4 GHz. The output phase noise under lock at an offset of 1 MHz with an input injection power of +4 dBm is -139 dBc/Hz.
机译:提出了一种具有23-27 GHz宽输入锁定范围的CMOS除三注入锁定分频器。通过结合并联峰值和电流泄放技术来实现较宽的锁定范围。所提出的电路是使用0.18μmRF CMOS工艺制造的,对于+4 dBm的输入注入功率,测得的工作范围(即总锁定范围)为4.32 GHz(从23.17至27.49 GHz)。在1.2 V的电源电压下,功耗为4.28 mW。对于8.4 GHz的分频输出频率,二阶和三阶谐波抑制分别为38.05和37.89 dBc。在+4 dBm的输入注入功率下,在1 MHz偏移处锁定时的输出相位噪声为-139 dBc / Hz。

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