A 7- TO 14-GHz GaAs pHEMT LNA WITH 1.1 dB NOISE FIGURE AND 26 dB GAIN

摘要

A three-stage 7- to 14-GHz monolithic low-noise amplifier (LNA) has been fabricated using 0.15-μm AlGaAs/GaAs pHEMT technology. To achieve ultra low noise figure and wide operation bandwidth, the proposed LNA uses wideband matching network and negative feedback technique. Measured results from 7 to 14 GHz demonstrate a minimum of 1.1 dB noise figure and 26 dB gain. The input and output return loss exceeded 10 dB across the band. These results demonstrate the best performance of AlGaAs/GaAs pHEMT technology for wideband and low noise applications.