Design of ultra-wideband LNA with 3.6 ± 0.4 dB NF and 15.9 ± 1.1 dB gain

摘要

This paper presents an ultra-wideband (UWB) low noise amplifier (LNA) with low and flat noise figure (NF) as well as high and flat gain using 0.18 μm CMOS technology. Frequency range for both NF and gain is expanded by using current-reuse and weak shunt resistor feedback. The LNA consumes 8.4 mW under 1.8 V. High performances are achieved with the gain of 15.9 ± 1.1 dB, NF of 3.6 ± 0.4 dB within 2.9–10.8 GHz band. The input 1 dB compression point (P1dB) is ?17.1 dBm at 7 GHz. The area of the LNA is 0.63 mm2, with pads included.