X-BAND GaAs MMIC HIGH POWER AMPLIFIER FOR TRANSMITTER SPACE MODULE

摘要

In this letter, the design, realization, and test of an Xband GaAs microwave monolithic integrated circuit high power amplifier (HPA) are reported. The HPA is designed in a two stage configuration to fully match a 50Ω input and output impedance. Experimental results show that the HPA reaches an output power higher than 38 dBm with a gain higher than 17 dB and a ripple lower than 0.5 dB from 9 to 10.2 GHz frequency range. The power added efficiency is around 40%. The good level of performance and the low sensitivity to the environment temperature make this amplifier an excellent candidate for X band applications in phased array active antennas.