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首页> 外文期刊>Microwave and optical technology letters >AN X-BAND 185° CMOS PHASE SHIFTER MMIC FOR MULTIPLEANTENNA SYSTEMS
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AN X-BAND 185° CMOS PHASE SHIFTER MMIC FOR MULTIPLEANTENNA SYSTEMS

机译:适用于多种系统的X波段185°CMOS移相器MMIC

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摘要

The design and implementation of an X-band phase shifter MMIC using the standard 0.18-μm CMOS process is presented. A transformed doublet varactor load is analyzed and applied to a 3-dB quadrature coupler to exhibit large phase shift tuning range and low insertion loss with minimal variation. By using the derived design equations, the implemented CMOS reflection-type phase shifter demonstrates a continuous phase shift tuning range greater than 185°, an average insertion loss of 5.2 dB with ±0.4 dB variation, and return losses better than 13 dB in 9-11 GHz. The total chip size including I/O pads is 0.76 × 0.79 mm{sup}2.
机译:介绍了使用标准0.18μmCMOS工艺的X波段移相器MMIC的设计和实现。分析了转换后的双态变容二极管负载,并将其施加到3-dB正交耦合器上,以显示出大的相移调谐范围和低的插入损耗,并且变化很小。通过使用推导的设计方程式,已实现的CMOS反射型移相器显示出连续相移调谐范围大于185°,平均插入损耗为5.2 dB(±0.4 dB变化),而回波损耗在9-dB时优于13 dB。 11 GHz。包括I / O焊盘在内的总芯片尺寸为0.76×0.79 mm {sup} 2。

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