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CMOS QUADRATURE VCO USING THE INJECTION MOSFET COUPLING

机译:使用注入MOSFET耦合的CMOS正交VCO

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This article presents a new quadrature voltage-controlled oscillator (QVCO). The LC-tank QVCO consists of two first-harmonic injection-locked oscillators (ILOs). The outputs of one ILO are injected to the gates of the MOS transistors on the other ILO and vice versa so as to force the two local oscillator (LOs) operate in quadrature. The injection metal-oxide-semiconductor field-effect transistors (MOSFETs) are also used as frequency tuning varactors. The QVCO has been implemented with the Taiwan Semiconductor Manufacture Company (TSMC) 0.18μm complementary metal-oxide-semiconductor (CMOS) technology and the die area is 0.646 mm×0.841 mm. At the supply voltage of 1.3 V, the total power consumption is 9.58 mW. The free-running frequency is tunable from 5.44 to 5.95 GHz as the tuning voltage is varied from 0.2 to 2.0 V. The measured phase noise at 1 MHz offset is -121.52 dBc/Hz at the oscillation frequency of 5.91 GHz and the figure of merit (FOM) of the proposed QVCO is about -187.14 dBc/Hz.
机译:本文介绍了一种新型的正交压控振荡器(QVCO)。 LC储罐QVCO由两个一阶谐波注入锁定振荡器(ILO)组成。一个ILO的输出被注入到另一个ILO上的MOS晶体管的栅极,反之亦然,以迫使两个本地振荡器(LO)正交工作。注入金属氧化物半导体场效应晶体管(MOSFET)也用作频率调谐变容二极管。 QVCO已采用台湾半导体制造公司(TSMC)的0.18μm互补金属氧化物半导体(CMOS)技术实现,管芯面积为0.646 mm×0.841 mm。在1.3 V的电源电压下,总功耗为9.58 mW。当调谐电压在0.2至2.0 V之间变化时,自由运行频率在5.44至5.95 GHz范围内可调。在5.91 GHz的振荡频率和品质因数下,在1 MHz偏移下测得的相位噪声为-121.52 dBc / Hz。建议的QVCO的(FOM)约为-187.14 dBc / Hz。

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