Growth modes and chemical-phase separation in GaP1−xNx layers grown by chemical beam epitaxy on GaP/Si(001)

摘要

We investigated the chemical beam epitaxy of GaP 1−xN x grown on nominally (001)-oriented Si substrates, as desired for the lattice-matched integration of optoelectronic devices with the standard Si technology. The growth mode and the chemical, morphological, and structural properties of samples prepared using different growth temperatures and N precursor fluxes were analyzed by several techniques. Our results show that, up to x≈0.04, it is possible to synthesize smooth and chemically homogeneous GaP 1−xN x layers with a high structural quality. As the flux of the N precursor is increased at a given temperature to enhance N incorporation, the quality of the layers degrades upon exceeding a temperature-dependent threshold; above this threshold, the growing layer experiences a growth mode transition from 2D to 3D after reaching a critical thickness of a few nm. Following that transition, the morphology and the chemical composition become modulated along the 110 direction with a period of several tens of nm. The surface morphology is then characterized by the formation of {113}-faceted wires, while the N concentration is enhanced at the troughs formed in between adjacent (113) and (1¯1¯3). On the basis of this study, we conclude on the feasibility of fabricating homogeneous thick GaP 1−xN x layers lattice matched to Si ( x=0.021) or even with N content up to x=0.04. The possibility of exceeding a N mole fraction of 0.04 without inducing coupled morphological–compositional modulations has also been demonstrated when the layer thickness is kept below the critical value for the 2D–3D growth mode transition.