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Design and modeling of a novel RF MEMS series switch with low actuation voltage

机译:低激励电压的新型RF MEMS系列开关的设计与建模

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This paper presents the design, analysis, modeling and simulation of a novel RF MEMS series switches with low actuation voltage. A mechanical modeling is presented to describe the behavior of the series switch. The switch is designed with special mechanical structures. The novel mechanical and mathematical modeling of the switch leads to calculation of the accurate actuation voltage. The spring constant has been calculated in relation to the presence of the residual stress in the beam. The calculated spring constant for this beam is used to determine the accurate actuation voltage. The size of the switch is 60 x 110 A mu m(2). The designed RF MEMS series switch was simulated using Intellisuite MEMS tool. He calculated actuation voltage is 4.05 V and simulated one is 4.2 V for 0.6 A mu m beam thickness. The calculated result is also very close with simulated one. The proposed switch compared with other electrostatic switches has low actuation voltage and small size. The RF characteristics were simulated using HFSS software and the switch has good RF performance. The insertion loss of 0.067 dB, return loss of 26 dB and isolation of 16 dB were achieved at 40 GHz.
机译:本文介绍了一种新型的低激励电压RF MEMS系列开关的设计,分析,建模和仿真。提出了一种机械模型来描述串联开关的行为。该开关具有特殊的机械结构。开关的新颖的机械和数学模型可以计算出精确的驱动电压。已经根据梁中残余应力的存在计算了弹簧常数。计算出的该梁的弹簧常数用于确定准确的致动电压。开关的尺寸为60 x 110 Aμm(2)。使用Intellisuite MEMS工具对设计的RF MEMS系列开关进行了仿真。他计算出的激励电压为4.05 V,对于0.6 Aμm的光束厚度,仿真电压为4.2V。计算结果也与模拟结果非常接近。与其他静电开关相比,该开关具有较低的启动电压和较小的尺寸。使用HFSS软件模拟了RF特性,该开关具有良好的RF性能。在40 GHz时,实现了0.067 dB的插入损耗,26 dB的回波损耗和16 dB的隔离度。

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