Ultrahigh precision low-cost pinpointed SiO2 patterns nanofabrication by using traditional MEMS fabrication processes

摘要

Recent years, nanoscale patterns transfer technique from DNA origami molecules to SiO2 layer has been a promising approach of silicon based nanofabrication process. However, researchers find it difficult to locate SiO2 nano patterns with origami's shapes. Here, we present a novel and low-cost approach of ultrahigh precision SiO2 patterns nanofabrication in target position. Traditional contact lithography process is used to fabricate nanoscale silicon oxide islands array in this paper, which are used to pinpoint the position of ultrahigh precision nano patterns. Precise controllability sacrificial layer etching is the key process to realize nanoscale control of islands in process. This fabrication method is a simple and cost-effective method with high yield, which will hopefully make contributions for higher precision nanofabrication technology in the future.