Chemical polishing method of GaAs specimens for transmission electron microscopy

摘要

A practical method for transmission electron microscopy specimen preparation of GaAs-based materials with quantum dot structures is presented to show that high-quality image observations in high-resolution transmission electron microscopy (HRTEM) can be effectively obtained. Specimens were prepared in plan-view and cross-section using ion milling, followed by two-steps chemical fine polishing with an ammonia solution (NH_4OH) and a dilute H_2SO_4 solution. Measurements of electron energy loss spectroscopy (EELS) and atomic force microscopy (AFM) proved that clean and flat specimens can be obtained without chemical residues. HRTEM images show that the amorphous regions of carbon and GaAs can be significantly reduced to enhance the contrast of lattice images of GaAs-based quantum structure.