ET-AAS DETERMINATION OF TRACE ANALYTES IN HIGH PURITY BISMUTH AND TELLURIUM OXIDES

摘要

Optimal conditions for direct electrothermal atomic absorption (ET-AAS) determination of Al, Cd, Co, Cr, Cu, Fe, Mn, Ni, Pb, and V in high purity bismuth oxide and tellurium oxide are described. Matrix interference on the atomization of the analytes is studied. The analytical method developed in this paper permits determination of 0.005 mu g g(-1) Cd and Mn; 0.02-0.05 mu g g(-1) Al, Cu, Cr, and Fe; 0.1 mu g g(-1) Co, Ni, and Pb; 0.5 mu g g(-1) V with relative standard deviation 3-8%. (C) 1996 Academic Press, Inc. [References: 7]