Bismuth tellurium oxide-containing thick film paste and its use in the manufacture of semiconductor devices

摘要

The present invention is directed to an electroconductive thick film paste composition containing Ag and a bismuth-tellurium Pb-free oxide, both dispersed in an organic medium. The present invention is further directed to an electrode formed of the paste composition, and a semiconductor device, and more particularly to a solar cell comprising such an electrode. The present invention is also directed to bismuth tellurium oxide, which is a component of thick film pastes.