Spectral characterization of Ge trap detectors and photodiodes used as transfer standards

摘要

This paper presents results of investigations of the radiant power spectral responsivity within the near-infrared spectral range. Large-area windowless Ge photodiodes 10 mm in diameter used as single photodiodes, as well as in a trap configuration, were studied within a wide spectral range. The spectral responsivity of the reflection trap detector equipped with three photodiodes is compared with that of a single Ge photodiode from 600 nm to 2000 nm (all photodiodes of the same type). The temperature effect on the spectral responsivity is shown within the temperature range from 10℃ to 30℃. The results are discussed in terms of spectral quantum efficiency. Effects of non-linearity are also discussed.