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Bispectral multilayer photodiode detector and method for manufacturing such a detector
Bispectral multilayer photodiode detector and method for manufacturing such a detector
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机译:双光谱多层光电二极管检测器及其制造方法
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摘要
A bispectral detector comprising upper and lower semiconductor layers of a first conductivity type in order to absorb a first and a second electromagnetic spectrum, separated by an intermediate layer that forms a barrier; semiconductor zones of a second conductivity type implanted in upper layer and lower layer and each implanted at least partially in the bottom of an opening that passes through upper layer and intermediate layer; and conductor elements connected to semiconductor zones. At least that part of each opening that passes through upper layer is separated from the latter by a semiconductor cap layer: whereof the concentration of dopants of the second conductivity type is greater than 1017 cm−3; and whereof the thickness is chosen as a function of said concentration so that it exceeds the minority carrier diffusion length in the cap layer.
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机译:一种双谱检测器,其包括第一导电类型的上半导体层和下半导体层,以便吸收第一电磁谱和第二电磁谱,并被形成势垒的中间层隔开;在上层和下层中注入第二导电类型的半导体区,并且每个半导体区至少部分地注入穿过上层和中间层的开口的底部;和连接到半导体区域的导体元件。穿过上层的每个开口的至少一部分被半导体盖层与上层隔开:第二导电类型的掺杂剂的浓度大于10 17 Sup> cm - 3 Sup>;并且选择厚度作为所述浓度的函数,以使其超过盖层中的少数载流子扩散长度。
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