Low threshold, room temperature laser diode pumped Sb-based V(E)under-bar-CSEL emitting around 2.1 mu m

摘要

The operation of a diode-pumped AlGaAsSb/GaInAsSb type-I quantum-well vertical cavity surface emitting laser emitting near 2.1 mum is reported. The epitaxial structure, grown on GaSb by molecular beam epitaxy consists of a GaSb/AlAsSb Bragg reflector and a GaInAsSb/AlGaAsSb active region. A TEM00 low-divergence laser operation is demonstrated in quasi-CW (10 mus pulses, 10 duty cycle) from 250 up to 350K. A threshold as low as 390W/cm(2) at 250K combined with a T-0 around 33K has been measured. References: 6