Researchers Submit Patent Application, 'Method For Producing Semiconductor Substrate, Semiconductor Substrate, And Method For Preventing Crack Occurrence In Growth Layer', for Approval (USPTO 20230203704)

摘要

News editors obtained the following quote from the background information supplied by theinventors: “Conventionally, in manufacturing a semiconductor substrate, a semiconductor substrate ofa desired semiconductor material is manufactured by crystal-growing a semiconductor material (a so-calledheteroepitaxial growth) that is different from an underlying substrate on the underlying substrate.“However, in the heteroepitaxial growth, it has been regarded as a problem that occurrence of cracks,occurrence of dislocations, deterioration of surface morphology, warpage of the substrate, and the like, ina growth layer are present due to difference in lattice constant and thermal expansion coefficient betweenthe two materials.