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首页> 外文期刊>Medical Physics >In vivo verification of superficial dose for head and neck treatments using intensity-modulated techniques.
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In vivo verification of superficial dose for head and neck treatments using intensity-modulated techniques.

机译:使用强度调节技术对头颈部治疗的表面剂量进行体内验证。

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Skin dose is one of the key issues for clinical dosimetry in radiation therapy. Currently planning computer systems are unable to accurately predict dose in the buildup region, leaving ambiguity as to the dose levels actually received by the patient's skin during radiotherapy. This is one of the prime reasons why in vivo measurements are necessary to estimate the dose in the buildup region. A newly developed metal-oxide-semiconductor-field-effect-transistor (MOSFET) detector designed specifically for dose measurements in rapidly changing dose gradients was introduced for accurate in vivo skin dosimetry. The feasibility of this detector for skin dose measurements was verified in comparison with plane parallel ionization chamber and radiochromic films. The accuracy of a commercial treatment planning system (TPS) in skin dose calculations for intensity-modulated radiation therapy treatment of nasopharyngeal carcinoma was evaluated using MOSFET detectors in an anthropomorphic phantom as well as on the patients. Results show that this newly developed MOSFET detector can provide a minimal but highly reproducible intrinsic buildup of 7 mg cm(-2) corresponding to the requirements of personal surface dose equivalent Hp (0.07). The reproducibility of the MOSFET response, in high sensitivity mode, is found to be better than 2% at the phantom surface for the doses normally delivered to the patients. The MOSFET detector agrees well with the Attix chamber and the EBT Gafchromic film in terms of surface and buildup region dose measurements, even for oblique incident beams. While the dose difference between MOSFET measurements and TPS calculations is within measurement uncertainty for the depths equal to or greater than 0.5 cm, an overestimation of up to 8.5% was found for the surface dose calculations in the anthropomorphic phantom study. In vivo skin dose measurements reveal that the dose difference between the MOSFET results and the TPS calculations was on average -7.2%, ranging from -4.3% to -9.2%. The newly designed MOSFET detector encapsulated into a thin water protective film has a minimal reproducible intrinsic buildup recommended for skin dosimetry. This feature makes it very suitable for routine IMRT QA and accurate in vivo skin dosimetry.
机译:皮肤剂量是放射治疗中临床剂量测定的关键问题之一。当前正在计划的计算机系统无法准确地预测堆积区域中的剂量,从而使患者在放射治疗期间皮肤实际接收到的剂量水平不明确。这是为什么必须进行体内测量以估计堆积区域剂量的主要原因之一。引入了一种新开发的金属氧化物半导体场效应晶体管(MOSFET)检测器,该检测器专为快速变化的剂量梯度中的剂量测量而设计,可实现准确的体内皮肤剂量测定。与平面平行电离室和放射致变色膜相比,该检测器用于皮肤剂量测量的可行性得到了验证。使用拟人模型中以及患者身上的MOSFET检测器评估了用于鼻咽癌强度调制放射治疗的皮肤剂量计算中的商业治疗计划系统(TPS)的准确性。结果表明,这种新开发的MOSFET检测器可以提供最小但高度可重现的7 mg cm(-2)的固有累积量,对应于个人表面剂量当量Hp(0.07)的要求。对于正常传递给患者的剂量,在高灵敏度模式下,发现在幻像表面上MOSFET响应的重现性优于2%。 MOSFET检测器在表面和积聚区剂量测量方面与Attix腔室和EBT Gafchromic膜非常吻合,即使对于倾斜入射光束也是如此。尽管对于等于或大于0.5 cm的深度,MOSFET测量与TPS计算之间的剂量差在测量不确定性之内,但拟人体模研究中的表面剂量计算却高估了8.5%。体内皮肤剂量测量显示,MOSFET结果与TPS计算之间的剂量差异平均为-7.2%,范围为-4.3%至-9.2%。封装在薄水保护膜中的新设计的MOSFET检测器具有可重现的最小内在累积,推荐用于皮肤剂量学。此功能使其非常适合常规IMRT QA和准确的体内皮肤剂量测定。

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