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机译:
IBM Research Division, Zurich Research Laboratory,/ 8803 Rüschlikon, Switzerland;
Institute of Inorganic Chemistry, University of Zurich,/ 8057 Zurich, Switzerland;
机译:High growth rate of erbium oxide thin films in atomic layer deposition from (CpMe)(3)Er and water precursors
机译:Influence of oxygen flow rate on properties of indium tin oxide thin films prepared by ion-assisted electron beam evaporation
机译:High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation
机译:p-Type Transparent Amorphous Oxide Thin-Film Transistors Using Low-Temperature Solution-Processed Nickel Oxide
机译:Interactive effects of nitrogen and light on growth rates and RUBIsCO content of small and large centric diatoms