Amorphous InGaZnO thin film transistors with sputtered silver source/drain and gate electrodes

摘要

The amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) with sputtered silver source/drain (S/D) and gate electrodes were investigated and developed. The sputtered single-film Ag was confirmed to be unfit for the electrodes of a-IGZO TFTs because of its bad contact with a-IGZO and atom diffusion into insulators. Accordingly the sputtered Mo films were proposed to serve as the capping layers, indicating that the 20-nm-thick Mo could effectively form ohmic contact with the a-IGZO, prevent the Ag diffusion into the SiOx, and make good adhesion to the glass substrates. The devices with multi-layer S/D and gate electrodes (Mo/Ag/Mo) were successfully fabricated, exhibiting the reasonably good performance and thus proving the application of the sputtered silver electrodes into a-IGZO TFTs was possible. (C) 2016 Elsevier Ltd. All rights reserved.