首页> 外文期刊>Materials science in semiconductor processing >First-principles calculations of the structural, electronic and optical properties of In1-xBxAsyP1-y quaternary alloys lattice matched to InP and BeS
【24h】

First-principles calculations of the structural, electronic and optical properties of In1-xBxAsyP1-y quaternary alloys lattice matched to InP and BeS

机译:与InP和BeS晶格匹配的In1-xBxAsyP1-y四元合金的结构,电子和光学性质的第一性原理计算

获取原文
获取原文并翻译 | 示例
       

摘要

The structural, electronic, and optical properties of the cubic In1-xBxAsyP1-y quaternary alloys lattice matched to InP and BeS have been investigated by using the full-potential linearized augmented plane wave (FP-LAPW) method within the density functional theory (DFT). The generalized gradient approximation (GGA) of Wu and Cohen was used as the exchange correlation potential to calculate the structural and electronic properties. In addition, the alternative GGA proposed by Engel and Vosko and the modified Becke-Johnson potential are utilized to calculate the electronic properties. The computed structural and electronic properties of the binary compounds are in good agreement with the available experimental and theoretical data. For the alloys, non-linear variations of composition x and y with the lattice constant, bulk modulus, direct, indirect band gap, dielectric constant and refractive index are found. All the compounds are direct band gap excluding BP and BAs. The energy band gap of In1-xBxAsyP1-y quaternary alloys lattice matched to InP and BeS substrates is computed. Finally, the band gap of our materials is less than 3.1 eV. Thus the In1-xBxAsyP1-y quaternary alloys may possibly be used in visible light devices. (c) 2015 Elsevier Ltd. All rights reserved.
机译:通过在密度泛函理论(DFT)中使用全势线性化增强平面波(FP-LAPW)方法研究了与InP和BeS晶格匹配的立方In1-xBxAsyP1-y四元合金的结构,电子和光学性质)。 Wu和Cohen的广义梯度近似(GGA)被用作交换相关势来计算结构和电子性质。此外,由恩格尔和沃斯科提出的替代GGA和改进的Becke-Johnson势被用来计算电子性能。二元化合物的计算结构和电子性质与现有的实验和理论数据非常吻合。对于合金,发现组成x和y随晶格常数,体积模量,直接,间接带隙,介电常数和折射率的非线性变化。除BP和BA外,所有化合物均为直接带隙。计算了与InP和BeS衬底晶格匹配的In1-xBxAsyP1-y四元合金的能带隙。最后,我们材料的带隙小于3.1 eV。因此,In1-xBxAsyP1-y四元合金可能会用于可见光设备中。 (c)2015 Elsevier Ltd.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号