Current-voltage and photovoltaic characteristics of n-Ge_(10)Se_(80)In_(10)/p-Si heterojunction

摘要

In this work, the analysis of electrical properties Au-Ge_(10)Se_(80)In_(10)/p-Si/Al heterojunction is studied. The dark forward current-voltage characteristics showed a thermoionic emission mechanism at low voltages (V≤ 0.4 V) followed by a SCLC mechanism at high voltages (/≤0.5 V). The junction parameters like series resistance, rectification ratio, ideality factor, effective barrier height, and total trap concentration were determined. The capacitance-voltage (C-V) characteristics of n-Ge_(1-)Se_(80)In_(10)/p-Si devices were also investigated. The barrier height value obtained from the C-V measurements was found to be 0.56 eV. Solar cell parameters were also evaluated under illumination of 6 mW/cm~2 and the power conversion efficiency was estimated as 1.5%.