High-frequency SiGe : C HBTs with elevated extrinsic base regions

摘要

This paper reports on the transistor design of high-speed SiGe HBTs with low parasitic resistances and capacitances. Elevated extrinsic base regions and a low-resistance collector design were integrated in a SiGe:C BiCMOS technology to simultaneously minimize base and collector resistances and base-collector capacitance. This technology features CML ring oscillator delays of 3.6 ps per stage for HBTs with f(T)/f(max) values of 190/243 GHz and a BVCEO of 1.9 V. (C) 2004 Elsevier Ltd. All rights reserved.