Piezoelectric and electrical properties of PZT-PSN thin film ceramics for MEMS applications

摘要

Piezoelectric and electrical properties of PZT-PSN ceramics have been investigated as a function of WO_3 addition from 0 to 6.0 wt%. The dielectric and piezoelectric characteristics of PZT-PSN ceramics have been investigated at different calcination (800-900 ℃) and sintering (1100-1300 ℃) temperatures. The grain size increased in proportion to adding the amount of WO_3 and increasing the sintering temperatures. Anisotropic properties of electromechanical coupling coefficient and piezoelectric coefficient are proven to be dependent on processing temperatures and amount of addition. For the specimen with 0.6 wt% WO_3 addition, using a calcination temperature of 800 ℃ and a sintering temperature of 1100 ℃, the mechanical quality factor and electromechanical coupling coefficient were 1560 and 0.48, respectively. Thin films were deposited in situ onto Pt/Ti/SiO_2/Si substrates by pulsed laser deposition using a Nd:YAG laser. The microstructure, dielectric, electrical, and piezoelectric properties of thin films with the compound ceramics have been systematically investigated for microtransformer and MEMS applications.