Electrical and interfacial characteristics of nanolaminate (Al2O3/ZrO2/Al2O3) gate stack on fully depleted SiGe-on-insulator

摘要

The structural and electrical characteristics of a novel nanolaminate Al2O3/ZrO2/Al2O3 high-k gate stack together with the interfacial layer (IL) formed on SiGe-on-insulator (SGOI) substrate have been investigated. A clear layered Al2O3 (2.5 nm)/ZrO2 (4.5 nm)/Al2O3 (2.5 nm) structure and an IL (2.5 nm) are observed by high-resolution transmission electron microscopy. X-ray photoelectron spectroscopy measurements indicate that the IL contains Al-silicate without Ge atom incorporation. A well-behaved C-V behavior with no hysteresis shows the absence of Ge pileup or Ge segregation at the gate stack/SiGe interface. (c) 2006 Elsevier Ltd. All rights reserved.