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机译:
Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43212 USA;
机译:Analysis of the Back-Gate Effect in Normally OFF p-GaN Gate High-Electron Mobility Transistor
机译:Influence of polarization Coulomb field scattering on the electrical properties of normally-off recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor with ALD-Al2O3 gate dielectric stack
机译:Increasing the breakdown voltage in gate - Field plate High Electron Mobility Transistor using a surface field distribution layer and gate-drain edge passivation
机译:2000年$ \ nu = 1 $量子霍尔效应的有限温度特性 Bilayer Electron systems