机译：Investigation on impact of Al_xGa_(1-x)N and InGaN back barriers and source-drain spacing on the DC/RF performance of Fe-doped recessed T-gated AlN/GaN HEMT on SiC wafer for future RF power applications
机译：Increasing the breakdown voltage in gate - Field plate High Electron Mobility Transistor using a surface field distribution layer and gate-drain edge passivation
机译：Modulating the structural, optical, electrical and topographical features of CdSeiBi films with annealing: Role as promising absorber to solar cells
机译：Spin-transport across a two-dimensional metal-semiconductor interface with infinite potential in presence of spin-orbit interactions: Double refraction and spin-filtering effect
机译：Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review
机译：Degradation study on triple junction inverted metamorphic InGaP/InGaAs-GaAsP MQW/InGaAs multiple quantum well solar cell using advanced physical models
