Saturation of far‐infrared photoconductivity inn‐GaAs

摘要

The photoconductivity of epitaxialn‐GaAs (n= 2.6×1014cm−3) has been measured in response to high intensity (P∼2.4 kW/cm2) radiation at lgr; = 95 mgr;m. The saturation curve of photoconductivity versus excitation power yields a recombination time of 10−8s, which is much shorter than the value predicted, 10−6s, by the theory of the electron‐phonon interaction. Recombination appears to occur from localized states as well as by capture of free conduction band electrons.